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| MITSUBISHI SEMICONDUCTOR MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Until : millimeters (inches) 240.3 (0.9450.012) FEATURES Class A operation Internally matched to 50 () system High output power P1dB=30W (TYP.) @f=2.3~2.5GHz High power gain GLP=12dB (TYP.) @f=2.3~2.5GHz High power added efficiency add=45% (TYP.) @f=2.3~2.5GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=34.5dBm S.C.L. R1.2 (0.0240.006) 0.60.15 APPLICATION item 01 : 2.3~2.5GHz band power amplifier item 51 : 2.3~2.5GHz band digital radio communication 20.40.2 (0.8030.008) 16.7 (0.658) QUALITY GRADE IG RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.5A RG=25 GF-38 (1) GATE (2) Source (FLANGE) (3) DRAIN ABSOLUTE MAXIMUM RATINGS (Ta=25C) < Keep safety first in your circuit designs! > Symbol VGDO VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 Ratings -15 -15 22 -61 76 88 175 -65 ~ +175 Unit V V A mA mA W C C Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them.Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. Tstg Storage temperature *1 : Tc=25C ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol VGS (off) P1dB GLP ID add IM3 Rth (ch-c) Parameter Saturated drain current Output power at 1dB gain compression Linear power gain Drain current Power added efficiency 3rd order IM distortion Thermal resistance *1 *2 Vf method VDS=10V, ID(RF off)=6.5A, f=2.3~2.5GHz Test conditions VDS=3V, ID=60mA Limits Min. -- 44 11 -- -- -42 -- Typ. -- 45 12 7.5 45 -45 -- Max -5 -- -- -- -- -- 1.7 Unit V dBm dB A % dBc C/W *1 : item -51, 2 tone test, Po=34.5dBm Single Carrier Level, f=2.3, 2.4, 2.5GHz,f=5MHz *2 : Channel to case MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR MGFS45V2325 2.3~2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET TYPICAL CHARACTERISTICS P1dB,GLP vs. Freq. 46 P1dB Po,add vs. Pin 16 50 VDS=10V IDS=6.5A f=2.4GHz 70 45 VDS=10V IDS=6.5A 15 45 Po 60 40 44 GLP 50 14 35 40 add 43 13 30 30 42 12 25 20 41 2.25 2.3 2.35 2.4 Frequency (GHz) 2.45 2.5 11 2.55 20 15 20 25 30 Input power Pin (dBm) 35 40 10 Po,IM3 vs. Pin 40 VDS=10V IDS=6.5A f1=2.500GHz f2=2.505GHz 0 38 -10 Po 36 -20 34 -30 32 IM3 -40 30 -50 28 15 20 25 Input power Pin (dBm S.C.L.) -60 30 S Parameters ( Tc=25C, VDS=10V, IDS=6.5A ) f (GHz) 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 S11 Angle(deg) -168 170 150 132 112 87 53 1 -48 S-Parameter (TYP.) S21 S12 Angle(deg) Magn. Angle(deg) 88 0.036 47 71 0.037 29 54 0.038 10 0.040 38 -7 21 0.041 -26 3 0.041 -45 -14 0.043 -63 -34 0.044 -85 -54 0.043 -103 S22 Angle(deg) -10 -27 -45 -66 -86 -105 -125 -141 -158 Magn. 0.36 0.39 0.40 0.39 0.36 0.30 0.24 0.21 0.28 Magn. 4.71 4.70 4.68 4.68 4.68 4.68 4.64 4.52 4.28 Magn. 0.30 0.26 0.23 0.22 0.22 0.23 0.24 0.25 0.25 MITSUBISHI ELECTRIC |
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